Top electrode for a memory device and methods of making such a memory device

ABSTRACT

One illustrative device disclosed herein includes a memory cell positioned in a first opening in at least one layer of insulating material. The memory cell comprises a bottom electrode, a memory state material positioned above the bottom electrode and an internal sidewall spacer positioned within the first opening, wherein the internal sidewall spacer defines a spacer opening. The device also comprises a top electrode positioned within the spacer opening.

BACKGROUND OF THE INVENTION Field of the Invention

The present disclosure generally relates to the fabrication ofintegrated circuits, and, more particularly, to various novelembodiments of a conductive top electrode for a memory device andvarious novel methods of making such a memory device.

Description of the Related Art

In many modern integrated circuit products, embedded memory devices andlogic circuits (e.g., microprocessors) are formed on the same substrateor chip. Such embedded memory devices may come in a variety of forms,e.g., an MTJ (magnetic tunnel junction) memory device, an RRAM(resistive random access memory) device, a PRAM (phase-change randomaccess memory) device, an MRAM (magnetic random access memory) device, aFRAM (ferroelectric random access memory) device, etc. Typically, all ofthe embedded memory devices have a top electrode to which a conductivecontact structure must be formed for the device to be operational.

Various techniques have been employed to try to form such a conductivecontact structure to the top electrode of such a memory device.Typically, after the top electrode is formed, it is covered by a layerof insulating material. At some point later in the process flow, theupper surface of the top electrode must be exposed to allow forformation of the conductive contact structure. One technique involvesetching a trench into the layer of insulating material so as to exposeor “reveal” the top electrode. This necessitates that the bottom of thetrench extends past the upper surface of the top electrode. One problemwith this technique is that it typically requires that the top electrodebe made relatively thicker so as to provide an increased process windowand reduce the chances of the trench exposing other parts of the memorydevice, leading to the creation of an undesirable electrical short thatwould render the memory device inoperable. Another manufacturingtechnique that is commonly employed involves directly patterning (viamasking and etching) a via that is positioned and aligned so as toexpose the upper surface of the top electrode. One problem with thisapproach is the fact that, as device dimensions continue to shrink, itis very difficult to properly align the via such that it only exposes aportion of the upper surface of the top electrode. Any misalignment ofthe via relative to the top electrode can result in undesirable exposureof the sidewalls of the top electrode, which can also lead toundesirable electrical shorts and device inoperability. Additionally,these processing steps lead to higher manufacturing costs and requirethe use of additional masking layers.

The present disclosure is generally directed to various novel methods offorming a conductive contact structure to a top electrode of an embeddedmemory device on an integrated circuit (IC) product and a correspondingIC product that may at least reduce one or more of the problemsidentified above.

SUMMARY

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

Generally, the present disclosure is directed to various novelembodiments of a conductive top electrode for a memory device andvarious novel methods of making such a memory device. One illustrativedevice disclosed herein includes at least one layer of insulatingmaterial and a memory cell positioned in a first opening in the at leastone layer of insulating material. The memory cell comprises a bottomelectrode, a memory state material positioned above the bottom electrodeand an internal sidewall spacer positioned within the first opening,wherein the internal sidewall spacer defines a spacer opening. In thisexample, the device also comprises a top electrode positioned within thespacer opening and above a portion of the memory state material.

One illustrative method disclosed herein includes forming a stack ofmaterials for a memory cell, the stack of materials comprising a bottomelectrode and a memory state material positioned above the bottomelectrode, forming at least one first layer of insulating materialaround the stack of materials and forming a cavity in the at least onefirst layer of insulating material above at least a portion of the stackof materials. In this example, the method also includes forming aninternal sidewall spacer within the cavity above at least a portion ofthe stack of materials, the internal sidewall spacer defining a spaceropening and forming a top electrode within the spacer opening and abovea portion of the stack of materials.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1-11 depict various novel embodiments of a conductive topelectrode for a memory device and various novel methods of making such amemory device. The drawings are not to scale.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e. , adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

As will be readily apparent to those skilled in the art upon a completereading of the present application, the presently disclosed structuresand method may be applicable to a variety of products, stand-alonememory products, embedded memory products, etc. The various components,structures and layers of material depicted herein may be formed using avariety of different materials and by performing a variety of knownprocess operations, e.g., chemical vapor deposition (CVD), atomic layerdeposition (ALD), a thermal growth process, spin-coating techniques,etc. The thicknesses of these various layers of material may also varydepending upon the particular application. With reference to theattached figures, various illustrative embodiments of the methods anddevices disclosed herein will now be described in more detail.

FIGS. 1-11 depict various novel embodiments of an integrated circuitproduct 100 comprising a conductive top electrode for a memory deviceand various novel methods of making such a memory device. The IC product100 will be formed on and above a semiconductor substrate (not shown).The semiconductor substrate may have a variety of configurations, suchas a bulk silicon configuration. The substrate may also have asemiconductor-on-insulator (SOI) configuration that includes a basesemiconductor layer, a buried insulation layer and an activesemiconductor layer positioned above the buried insulation layer,wherein transistor devices (not shown) that are formed on the substrateare formed in and above the active semiconductor layer. The substratemay be made of silicon or it may be made of materials other thansilicon. Thus, the terms “substrate” or “semiconductor substrate” shouldbe understood to cover all semiconducting materials and all forms ofsuch materials.

In general, and with reference to FIG. 1, the IC product 100 comprises amemory region 102 where one or more memory devices will be formed and alogic region 104 where one or more logic circuits (e.g., microprocessorcircuits) will be formed in and above a semiconductor substrate (notshown in the attached figures). As is typical, the IC product 100includes a plurality of metallization layers that constitute the overallwiring pattern for the IC product 100. These metallization layers may beformed on the IC product 100 by performing traditional manufacturingprocesses. These metallization layers are typically comprised of layersof insulating material (e.g., silicon dioxide) with a plurality ofconductive metal lines and/or conductive vias formed in the layers ofmaterial. The conductive metal lines are routed across the substrate invarious patterns and arrangements and provide the means for intra-layerelectrical communication between the devices and structures formed on orabove the substrate. The conductive vias provide the means for allowingelectrical communication between the conductive metal lines in adjacentmetallization layers. The first metallization layer of an IC product istypically referred to as the “M1” layer (or in some cases the “M0”layer), while the conductive vias that are used to establish electricalconnection between the M1 layer and the conductive lines in theimmediately adjacent upper metallization layer (the “M2 layer) aretypically referred to as “V1” vias. So-called device level contacts (notshown) are formed above the substrate so as to provide electricalcommunication between the various devices, e.g., transistors, resistors,etc., that are formed on or immediately adjacent the semiconductorsubstrate.

FIG. 1 depicts the IC product 100 after several process operations wereformed. More specifically, FIG. 1 depicts the product 100 at a point intime wherein an illustrative (and representative) metallization layer105 has been formed above the semiconductor substrate (not shown). Aswill be appreciated by those skilled in the art after a complete readingof the present application, the metallization layer 105 is intended tobe representative of any metallization layer that may be formed on theIC product 100 irrespective of its location relative to an upper surfaceof the semiconductor substrate or any of the other metallization layersformed on the IC product 100.

With continued reference to FIG. 1, the product 100 is depicted at apoint in time where a layer of insulating material 106, e.g., silicondioxide, for a representative metallization layer—Mx—of the IC product100 has been formed above the semiconductor substrate. As noted abovethe Mx metallization layer is intended to be representative of anymetallization layer formed at any level on the IC product 100. In theexample shown in FIG. 1, various illustrative conductive metal lines 108have been formed in the layer of insulating material 106 in both thememory region 102 and the logic region 104. The number, size, shape,configuration and overall routing of the metal lines 108 may varydepending upon the particular application. In one example, theconductive metal lines 108 are elongated features that extend across theproduct 100 in a direction that is transverse to the plane of thedrawing in FIG. 1. The metal lines 108 may be comprised of any of avariety of different conductive materials, e.g., copper, aluminum,tungsten, etc., and they may be formed by traditional manufacturingtechniques, e.g., by performing a damascene process for cases where theconductive lines 108 are made of copper and perhaps by performingtraditional deposition and etching processes when the conductive lines108 are made of a conductive material that may readily be patternedusing traditional masking and patterning (e.g., etching) techniques.

Also depicted in FIG. 1 is a layer of insulating material 112 that wasblanket-deposited on the IC product 100. If desired, a planarizationprocess may be performed on the layer of insulating material 112 tosubstantially planarize its upper surface. The layer of insulatingmaterial 112 is representative in nature is that it may represent asingle layer of material or multiple layers of material. The single ormultiple layers of insulating material 112 may be comprised of a varietyof different insulating materials, e.g., silicon carbon nitride (SiCN),SiN, Al₂O₃, HfO_(x), SiO₂, SiON, SiOCN, etc., and its vertical thicknessmay vary depending upon the particular application.

Next, a patterned etch mask (not shown) was formed on the IC product100. This particular patterned etch mask covers the logic region 104 butexposes portions of the layer of insulating material 112 at locations inthe memory region 102 where it is desired to establish electricalcontact with the conductive lines 108 formed in the layer of insulatingmaterial 106 within the memory region 102. At that point, an etchingprocess was performed through the patterned etch mask (not shown) so asto remove exposed portions of the layer of insulating material 112 inthe memory region 102. This etching process operation results in theformation of overall contact openings 111 that extend through the layerof insulating material 112 and thereby expose at least portion of theupper surface of the conductive lines 108 in the memory region 102. Atthat point, the patterned etch mask may be removed. Then, a conductivevia 114 was formed in each of the openings 111 by performing traditionalmanufacturing processing techniques, e.g., by performing a depositionprocess so as to overfill the openings 111 in the memory region 102 withconductive material(s), followed by performing a chemical mechanicalplanarization (CMP) process operation and/or a dry etch-back process toremove the excess amounts of the conductive material for the conductivevias 114 that are positioned on or above the upper surface of the layerof insulating material 112. In one illustrative embodiment, when viewedfrom above, the conductive vias 114 may have a substantially circularconfiguration. In other situations, the conductive vias 114 may have asubstantially oval configuration. The vertical thickness of theillustrative vias 114 may vary depending upon the particularapplication, and they may be comprised of a variety of conductivematerials, e.g., copper, tungsten, aluminum, TiN, TaN, etc. Theconductive vias 114 may be comprised of the same material ofconstruction as that of the conductive metal line 108 to which it isconductively coupled, but that may not be the case in all applications.Of course, as will be appreciated by those skilled in the art after acomplete reading of the present application, various barrier layers orliner layers (neither of which is shown) may be formed as part of theprocess of forming the illustrative conductive lines 108 and theconductive vias 114. Moreover, various additional conductive structuresthat will be formed on the IC product 100, as discussed more fullybelow, may or may not include such illustrative barrier layers and/orliner layers, which are not depicted so as to not overly complicate theattached drawings.

As will be appreciated by those skilled in the art after a completereading of the present application, the present disclosure is directedto the formation of a conductive top electrode for a memory cell 125, asdescribed more fully below. The memory cell 125 depicted herein isintended to be generic and representative in nature. By way of exampleonly, and not by way of limitation, the generic memory cells 125depicted herein may take a variety of forms, have a variety of differentconfigurations and may comprise different materials. For example, thememory cells 125 depicted herein may be an RRAM (resistive random accessmemory) device, an MTJ (magnetic tunnel junction) memory device, an RRAM(resistive random access memory) device, a PRAM (phase-change randomaccess memory) device, an MRAM (magnetic random access memory) device, aFRAM (ferroelectric random access memory) device, etc. Such a memorycell 125 includes some form of a memory state material 118 that istypically positioned between a bottom electrode and a top electrode,e.g., the switching layer in an RRAM device. In some applications, somecharacteristic of the memory state material 118, e.g., resistivity, maybe altered by the application of an electrical charge to the memorydevice 125, and these altered states may be representative of a logical“1” or a logical “0” in a digital circuit. In some situations, thememory state material 118 may actually store an electrical charge. Inany event, sensing circuitry on the IC product 100 may be used to sensethe state of the memory state material 118, to determine whether or nota particular memory cell 125 represents a logical “1” or a logical “0”and use that information within the various circuits on the IC product100. The particular materials used for the memory state material 118 mayvary depending upon the particular type of memory device that isfabricated. Moreover, the single layer of memory state material 118depicted in the drawings is intended to be representative in that, in areal-world device, the memory state material 118 may comprise aplurality of layers of material. Thus, the reference to any “memorystate material” in the specification and in the attached claims shouldbe understood to cover any form of any material(s) that may be employedon any form of a memory device that can be manipulated or changed so asto reflect two opposite logical states of the memory device. Forpurposes of disclosing the subject matter herein, the memory cell 125will be depicted as being an RRAM device, but the presently disclosedsubject matter should not be considered to be limited to RRAM devices.

FIG. 2 depicts the IC product 100 after several process operations wereperformed. First, a first layer of conductive material 116 was formedabove the layer of insulating material 112 such that it conductivelycontacts the conductive vias 114. The first layer of conductive material116 may be formed to any desired thickness and it may comprise anyconductive material, e.g., copper, tungsten, ruthenium, aluminum, Ta,Ti, TaN, TiN, etc. As will be appreciated by those skilled in the artafter a complete reading of the present application, a portion of thefirst layer of conductive material 116 will become the bottom electrodefor each of the memory cells 125 disclosed herein. Thereafter, a layerof memory state material 118 was formed above the first layer ofconductive material 116. The layer of memory state material 118 may beformed to any desired thickness and it may comprise any of a variety ofdifferent materials, e.g., stoichiometric ZrO₂, ZnO, HfO₂, a doped metaloxide, phase-change chalcoenides (GeSbTe, AgInSbTe), binary transitionmetal oxide (NiO or TiN), perovskites (e.g., SrTiO₃), solid-stateelectrolytes (GeS, GeSe, SiO_(x)), organic chart-transfer complexes(CuTCNQ), organic donor-acceptor systems (AlDCN), two dimensioninsulating materials (e.g., boron nitride), etc. Next, a sacrificiallayer of material 120 was formed above the memory state material 118.The sacrificial layer of material 120 may be formed to any desiredthickness and it may comprise any of a variety of different materials,e.g., amorphous silicon, amorphous carbon, SiO2, SOH, SiON, SiOCN, etc.In some applications, a chemical mechanical planarization (CMP) processoperation and/or a dry etch-back process may be performed to planarizethe upper surface of the sacrificial layer of material 120. At thatpoint, a patterned etch mask 122 was formed above the sacrificial layerof material 120. The patterned etch mask 122 exposes portions of thememory region 102 and all of the logic region 104. The patterned etchmask 122 may be made by performing known manufacturing techniques and itmay be comprised of a variety of different materials, e.g., photoresist,organic planarization layer (OPL), silicon nitride, silicon dioxide,SiON, etc.

FIG. 3 depicts the IC product 100 after one or more etching processeswere performed to remove exposed portions of the sacrificial layer ofmaterial 120, the layer of memory state material 118 and the first layerof conductive material 116 so as to form a stack of materials for thememory cells 125 that will be formed using the methods disclosed herein.Note that, during these etching processes, the layer of insulatingmaterial 112 may be slightly recessed. As will be appreciated by thoseskilled in the art after a complete reading of the present application,the patterned portions of the sacrificial layer of material 120 aredummy or sacrificial placeholders for the area or volume where a topelectrode 130 (described below) and an internal sidewall spacer 128S(described below) will be formed after the patterned portions of thesacrificial layer of material 120 are removed.

FIG. 4 depicts the IC product 100 after several process operations wereperformed. First, the patterned etch mask 122 was removed. Thereafter, alayer of material 124 was formed in both the memory region 102 and thelogic region 104. As initially formed, the layer of material 124 mayoverfill the spaces between the regions of the patterned material layers120/118/116. At that point, a CMP process may be performed to remove aportion of the layer of material 124 until such time as the uppersurface 124S is substantially coplanar with the upper surface 120S ofthe sacrificial layer of material 120. As depicted, this processoperation exposes the portions of the sacrificial layer of material 120in the memory region 102 for further processing. The layer of material124 may be initially formed to any desired thickness. The layer ofmaterial 124 should be made of a material that exhibits good etchselectivity to the material of the sacrificial layer of material 120. Ingeneral, the layer of material 124 may be comprised of any of a varietyof different materials, e.g., amorphous carbon, SOH, SiOC, SiOCN,silicon dioxide, etc.

FIG. 5 depicts the IC product 100 after one or more etching processeswere performed to remove the exposed portions of the sacrificial layerof material 120 selectively relative to the surrounding materials. Theseprocess operations result in the formation of a cavity 126 in the layerof material 124 above the regions of memory state material 118 in thememory region 102.

FIG. 6 depicts the IC product 100 after a conformal deposition processwas performed to form a conformal layer of spacer material 128 acrossthe product 100 and in the cavities 126. The layer of spacer material128 may be of any desired thickness, e.g., 1-100 nm, and it may becomprised of any of a variety of different materials, e.g., SiN, SiCN,SiOCN, SiC, SiOC, Al₂O₃, amorphous silicon, etc. As will be describedmore fully below, in one illustrative process flow, the layer of spacermaterial 128 may be made relatively thick such that the top electrode130 (described below) for the memory device 125 will occupy a relativelysmaller volume of the cavity 126 as compared to the volume of the cavity126 occupied by the internal sidewall spacer 128S. Moreover, using themethods and devices disclosed herein, the top electrode 130 may besubstantially smaller, e.g., in terms of volume and/or physicaldimensions (vertical height, lateral width, etc.), as compared to thetop electrode on prior art memory cells.

FIG. 7 depicts the product 100 after an anisotropic etching process wasperformed to remove horizontally positioned portions of the layer ofspacer material 128. This etching process results in the formation ofthe above-mentioned internal sidewall spacer 128S in each of thecavities 126 above at least a portion of the layer of memory statematerial 118. In one particular example, the internal sidewall spacer128S may be formed such that it is positioned on and in physical contactwith an upper surface of the memory state material 118. The internalsidewall spacer 128S has a spacer opening 128X. The internal sidewallspacers 128S may be of any desired thickness (as measured at its base),e.g., 1-100 nm. In one particular embodiment, the thickness of theinternal sidewall spacer 128S may be such that the spacer occupiesapproximately 10-90% of the volume of the cavity 126. In one particularembodiment, the thickness of the internal sidewall spacer 128S may besuch that the spacer occupies at least 50% of the volume of the cavity126.

FIG. 8 depicts the product 100 after various operations were performedto form a top electrode 130 for the memory device 125 in the spaceropening 128X in each of the internal sidewall spacers 128S, e.g., thetop electrode 130 is formed in the remaining portion of the volume ofeach of the cavities 126 that is not occupied by the internal sidewallspacer 128S. Then, a layer of conductive material (not shown) for thetop electrode 130 was formed so as to overfill the spacer opening 128Xin each of the internal sidewall spacers 128S, e.g., the remainingun-filled portions of the volume of the cavities 126. Thereafter, a CMPprocess may be performed to remove all of the layer of conductivematerial positioned above the upper surface of the layer of material 124in both the memory region 102 and the logic region 104, therebyresulting in the formation of a top electrode 130 for each of the memorycells 125. As shown in FIG. 8, in one illustrative embodiment, whenviewed from above, the portion of the top electrode 130 may have asubstantially circular configuration. In other situations, the topelectrode 130 may have a substantially oval configuration. The topelectrode 130 may comprise any conductive material, e.g., copper,tungsten, ruthenium, aluminum, TaN, etc.

As mentioned above, in one illustrative embodiment, the top electrode130 disclosed herein may be significantly smaller in size (in terms ofvolume and/or physical dimensions) as compared to top electrodestructures on prior art memory cells. For example, in one embodiment,the combination of the internal sidewall spacer 128S and the topelectrode 130 define a combined volume wherein the internal sidewallspacer 128S occupies a first portion of the combined volume and the topelectrode 130 occupies a second portion of the combined volume, whereinthe first portion is greater than the second portion. In someembodiments, the first portion—the portion of the combined volumeoccupied by the internal sidewall spacer 128S—is about 10-90% of thecombined volume, and the second portion—the portion of the combinedvolume occupied by the top electrode 130—is at most about 10-90% of thecombined volume according to memory cell design and performance request.Stated another way, the internal sidewall spacer 128S may occupy a firstvolume of the cavity 126 and the top electrode 130 may occupy a secondvolume of the cavity, wherein the first volume is greater than thesecond volume. When viewed from above, in the case where the internalsidewall spacer 128S has a substantially circular ring type structure,the internal sidewall spacer 128S may have an outer diameter of aboutseveral nanometers to several micrometers, while the diameter of thespacer opening 128X may be about 50% of the whole area. Similarly, whenviewed from above, the top electrode 130 may be a substantiallycylindrical type structure having a diameter several nanometers toseveral micrometers depending upon the desired performancecharacteristics of the memory cell. Of course, as will be appreciated bythose skilled in the art after a complete reading of the presentapplication, the internal sidewall spacer 128S and the top electrode 130have a different configuration than that depicted in the drawings, e.g.,they both may have a substantially square configuration when viewed fromabove.

By making the top electrode 130 disclosed herein relatively smaller thanthe top electrode on prior art memory cells, several benefits may beachieved. For example, the relatively smaller top electrode 130disclosed herein is useful to confine the conduct filament with alocalized electrical field in the memory cell 125, thereby leading to amemory cell with highly stable endurance and data retentioncapabilities.

FIG. 9 depicts the IC product 100 after several process operations wereperformed. First, the layer of material 124 was removed. Thereafter, aconformal deposition process was performed to form a conformalencapsulation layer 132 across the product 100. The conformalencapsulation layer 132 may be of any desired thickness, e.g., severalto hundreds of nanometers, and it may be comprised of any of a varietyof different materials, e.g., SiN, SiC, SiCN, SiOCN, Al₂O₃, HfO_(x),etc. Next, a representative layer of insulating material 134 was formedabove the conformal encapsulation layer 132. The layer of insulatingmaterial 134 is intended to be representative in nature as it may infact comprise multiple layers of material. The layer of insulatingmaterial 134 may be of any desired thickness, e.g., several to thousandsof nanometers, and it may be comprised of any of a variety of differentmaterials, e.g., SiO₂, a low-k material, etc. As depicted, each of thememory cells 125 is positioned in an opening 134X in the layer ofinsulating material 134

At the point of processing depicted in FIG. 9, various processoperations may be performed to form various contact openings in thevarious layers of material for various conductive contact structures tobe formed in the next metallization layer—Mx+1—of the IC product 100. Aswill be appreciated by those skilled in the art after a complete readingof the present application, there are several possible process flows forforming such conductive contacts. Accordingly, FIG. 10 depicts theproduct 100 after oner or more patterned etch masks (not shown) wereformed above the product 100 and after various etching processoperations were performed to form contact openings 135 for the memorycells 125 and a contact opening 136 in the logic region 104 forcontacting the metal line 108 in the logic region 104. Note that part ofthe etching processes removes the portion of the conformal encapsulationlayer 132 positioned above the top electrode 130 of each of the memorycells 125. However, the encapsulation layer 132 remains positionedaround the outer perimeter of the memory cell 125 between the insulationmaterial 134 and the memory cell 125. Each of the conductive contactopenings 135 exposes the top electrode 130 of each of the memory cells125. The conductive contact opening 136 exposes the metal line 108 inthe logic region 104.

FIG. 11 depicts the product 100 after various process operations wereperformed to form a conductive contact structures 138 in each of thecontact openings 135 and a conductive contact structure 140 in thecontact opening 136. The conductive contact structures 138, 140 may beformed using a variety of techniques. In one example, various conformalliners and/or barrier layers may be formed in the trench/via openings.Thereafter, a conductive material, such as tungsten, may be deposited soas to overfill the remaining portions of the contact openings 135, 136.At that point, a CMP process operation may be performed to remove allconductive material positioned above the upper surface of the layer ofinsulating material 134. Note the conductive contact structure 138 isconductively coupled to the top electrode 130 and a portion of theconductive contact structure 138 is positioned on and in physicalcontact with an upper surface of the internal sidewall spacer 128S.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Note that the use of terms, such as “first,” “second,”“third” or “fourth” to describe various processes or structures in thisspecification and in the attached claims is only used as a shorthandreference to such steps/structures and does not necessarily imply thatsuch steps/structures are performed/formed in that ordered sequence. Ofcourse, depending upon the exact claim language, an ordered sequence ofsuch processes may or may not be required. Accordingly, the protectionsought herein is as set forth in the claims below.

1. A device, comprising: at least one layer of insulating material; anda memory cell positioned in a first opening in the at least one layer ofinsulating material, the memory cell comprising: a bottom electrode; amemory state material positioned above the bottom electrode; an internalsidewall spacer positioned within the first opening and above at least aportion of the memory state material, the internal sidewall spacerdefining a spacer opening; and a top electrode positioned within thespacer opening and above a portion of the memory state material.
 2. Thedevice of claim 1, further comprising a conductive contact structurethat is conductively coupled to the top electrode and wherein a portionof the conductive contact structure is positioned on and in physicalcontact with an upper surface of the internal sidewall spacer.
 3. Thedevice of claim 1, wherein the at least one layer of insulating materialcomprises silicon dioxide, the internal sidewall spacer comprisessilicon nitride and the memory cell comprises one of an MTJ (magnetictunnel junction) memory device, an RRAM (resistive random access memory)device, a PRAM (phase-change random access memory) device, an MRAM(magnetic random access memory) device, or a FRAM (ferroelectric randomaccess memory) device.
 4. The device of claim 1, wherein the memorystate material is positioned on and in physical contact with the bottomelectrode, the internal sidewall spacer is positioned on and in physicalcontact with an upper surface of the memory state material and the topelectrode is positioned on and in physical contact with the uppersurface of the memory state material.
 5. The device of claim 1, whereinthe combination of the internal sidewall spacer and the top electrodedefine a combined volume, wherein the internal sidewall spacer occupiesa first portion of the combined volume and the top electrode occupies asecond portion of the combined volume, wherein the first portion isgreater than the second portion.
 6. The device of claim 5, wherein thesecond portion comprises less than 50% of the combined volume.
 7. Thedevice of claim 5, wherein the first portion comprises more than 50% ofthe combined volume.
 8. The device of claim 1, wherein the bottomelectrode comprises one of copper, tungsten, ruthenium, aluminum, Ta,Ti, TaN, or TiN, the memory state material comprises one ofstoichiometric ZrO₂, ZnO, HfO₂, a doped metal oxide, a phase-changechalcoenide, a binary transition metal oxide, a perovskite, asolid-state electrolyte, an organic chart-transfer complex, an organicdonor-acceptor system or a two dimension insulating material, and thetop electrode comprises one of copper, tungsten, ruthenium, aluminum,Ta, Ti, TaN, or TiN.
 9. The device of claim 1, wherein the top electrodeis conductively coupled to the memory state material.
 10. The device ofclaim 1, wherein the top electrode comprises a single layer of material.11. The device of claim 1, further comprising an encapsulation layerpositioned around an outer perimeter of the memory cell and between thememory cell and the at least one layer of insulating material.
 12. Adevice, comprising: at least one layer of insulating material; and amemory cell positioned in a first opening in the at least one layer ofinsulating material, the memory cell comprising: a bottom electrode; amemory state material positioned above the bottom electrode; an internalsidewall spacer positioned within the first opening and above at least aportion of the memory state material, the internal sidewall spacerdefining a spacer opening; and a top electrode positioned within thespacer opening and above a portion of the memory state material, whereinthe combination of the internal sidewall spacer and the top electrodedefine a combined volume, wherein the internal sidewall spacer occupiesat least 50% of the combined volume and the top electrode occupies aremaining portion of the combined volume not occupied by the internalsidewall spacer.
 13. The device of claim 12, further comprising aconductive contact structure that is conductively coupled to the topelectrode and wherein a portion of the conductive contact structure ispositioned on and in physical contact with an upper surface of theinternal sidewall spacer.
 14. The device of claim 12, further comprisingan encapsulation layer positioned around an outer perimeter of thememory cell and between the memory cell and the at least one layer ofinsulating material.
 15. The device of claim 12, wherein the memorystate material is positioned on and in physical contact with the bottomelectrode, the internal sidewall spacer is positioned on and in physicalcontact with an upper surface of the memory state material and the topelectrode is positioned on and in physical contact with the uppersurface of the memory state material.
 16. A method of forming a topelectrode of a memory cell, the method comprising: forming a stack ofmaterials for the memory cell, the stack of materials comprising abottom electrode and a memory state material positioned above the bottomelectrode; forming at least one first layer of insulating materialaround the stack of materials; forming a cavity in the at least onefirst layer of insulating material above at least a portion of the stackof materials; forming an internal sidewall spacer within the cavityabove at least a portion of the stack of materials, the internalsidewall spacer defining a spacer opening; and forming a top electrodewithin the spacer opening and above a portion of the stack of materials.17. The method of claim 16, wherein the stack of materials furthercomprises forming a layer of sacrificial top electrode materialpositioned above the memory state material and wherein forming thecavity comprises, after forming the at least one first layer ofinsulating material, removing the layer of sacrificial top electrode soas to form the cavity, wherein the cavity exposes an upper surface ofthe memory state material.
 18. The method of claim 16, wherein formingthe internal sidewall spacer comprises: forming a conformal layer ofspacer material above the at least one first layer of insulatingmaterial and in the cavity; and performing an anisotropic etchingprocess to remove horizontally oriented portions of the layer of spacermaterial so as to form the internal sidewall spacer within the cavity.19. The method of claim 16, wherein the internal sidewall spaceroccupies a first volume of the cavity and the top electrode occupies asecond volume of the cavity, wherein the first volume is greater thanthe second volume.
 20. The method of claim 16, wherein, after formingthe top electrode, the method further comprises: removing the at leastone first layer of insulating material; forming a conformalencapsulation layer around an outer perimeter of at least the internalsidewall spacer and above an upper surface of the top electrode; formingat least one second layer of insulating material above the conformalencapsulation layer and above the upper surface of the top electrode;forming a top electrode contact opening by performing at least oneetching process to remove a portion of the at least one second layer ofinsulating material positioned above the top electrode and to remove atleast a portion of the conformal encapsulation layer positioned above atleast a portion of the top electrode so as to thereby expose an uppersurface of the top electrode; and forming a conductive contact structurein the top electrode contact opening.